View FPD2000AS_1241320.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PRELIMINARY
* PERFORMANCE (1.8 GHz) 33 dBm Output Power (P1dB) 14 dB Power Gain (G1dB) 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Design Data Available on Website Usable Gain to 4GHz DESCRIPTION AND APPLICATIONS
FPD2000AS
2W PACKAGED POWER PHEMT
*
SEE PACKAGE OUTLINE FOR MARKING CODE
The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. * ELECTRICAL SPECIFICATIONS AT 22C
Parameter Power at 1dB Gain Compression Power Gain at dB Gain Compression Maximum Stable Gain S21/S12 Power-Added Efficiency at 1dB Gain Compression 3 -Order Intermodulation Distortion
rd
Symbol P1dB G1dB MSG PAE IP3
Test Conditions VDS = 10V; IDS = 350 mA S and L tuned for Optimum IP3 VDS = 10V; IDS = 350 mA S and L tuned for Optimum IP3 VDS = 10 V; IDS = 350 mA PIN = 0dBm, 50 system VDS = 10V; IDS = 350 mA S and L tuned for Optimum IP3 VDS = 10V; IDS = 350 mA S and L tuned for Optimum IP3 POUT = 22 dBm (single-tone level)
Min 32 12.5
Typ 33 14.0 20 45
Max
Units dBm
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
dB %
-47
-44
dBc
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (channel-to-case)
Phone: +1 408 850-5790 Fax: +1 408 850-5766
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| CC
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 4 mA IGS = 4 mA IGD = 4 mA See Note on following page
975
1150 1800 1200 35
1325
mA mA mS
85 1.4
A V V V C/W
0.7 14 20
0.9 16 22 20
http:// www.filcs.com
Revised: 05/03/04 Email: sales@filcsi.com
PRELIMINARY
* RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS ABSOLUTE MAXIMUM RATINGS1
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power
2
FPD2000AS
2W PACKAGED POWER PHEMT
*
Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Comp.
3
Test Conditions -3V < VGS < +0V 0V < VDS < +8V For VDS > 2V Forward / Reverse current Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions
Min
Max 12 -3 IDSS +15/-2 900 175
Units V V mA mA mW C C W dB %
Channel Operating Temperature Storage Temperature Total Power Dissipation Gain Compression
1
-40
150 7.6 5
Simultaneous Combination of Limits 2 or more Max. Limits 80 2 TAmbient = 22C unless otherwise noted Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes: * Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. * Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power * Total Power Dissipation to be de-rated as follows above 22C: PTOT= 7.6 - (0.05W/C) x TPACK where TPACK = source tab lead temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55C source lead temperature: PTOT = 7.6 - (0.05 x (55 - 22)) = 5.95W * For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package. * Note on Thermal Resistivity: The nominal value of 20C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads.
*
HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filcs.com
Revised: 05/03/04 Email: sales@filcsi.com
PRELIMINARY
FPD2000AS
2W PACKAGED POWER PHEMT
*
BIASING GUIDELINES Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD2000AS. Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 1.43 for the recommended 200mA operating point. This approach will require a DC Source resistor capable of at least 200mW dissipation. The recommended 350mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point.
*
PACKAGE OUTLINE (dimensions in millimeters - mm)
PACKAGE MARKING CODE
Example: f1ZD P2F
f = Filtronic 1ZD = Lot and Date Code P2F = Status, Part Code, Part Type
All information and specifications subject to change without notice.
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filcs.com
Revised: 05/03/04 Email: sales@filcsi.com
PRELIMINARY
*
FPD2000AS
2W PACKAGED POWER PHEMT
TYPICAL RF PERFORMANCE (VDS = 10V IDS = 350mA f = 2000 MHz):
Power Transfer Characteristic
34.00 3.50
32.00
3.00
30.00
2.50
28.00
2.00
26.00
Pout
Comp Point
1.50
24.00
1.00
22.00
.50
20.00
.00
18.00 4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
-.50 22.00
Input Power (dBm)
Drain Efficiency and PAE
70.00% 70.00%
60.00%
60.00%
PAE
Eff. 40.00%
40.00%
30.00%
30.00%
20.00%
20.00%
10.00%
10.00%
.00% 6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
22.00
.00% 24.00
Input Power (dBm)
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filcs.com
Revised: 05/03/04 Email: sales@filcsi.com
Drain Efficiency (%)
50.00%
50.00%
PAE (%)
Gain Compression (dB)
Output Power (dBm)
PRELIMINARY
IM Products vs. Input Power
FPD2000AS
2W PACKAGED POWER PHEMT
-20.00 27.00
-25.00
25.00
-30.00
Output Power (dBm)
Pout
23.00
Im3, dBc
-35.00
-40.00
21.00
-45.00
-50.00 19.00 -55.00
17.00 3.00 5.00 7.00 9.00 11.00 13.00
-60.00
Input Power (dBm)
Note: Graph above shows Input and Output power as single carrier or single-tone levels.
FPD2000AS IP3 CONTOURS 2 GHz
0.6
0 .8
IP3_dBm = 44 dBm
2.0
Swp Max 244
1.0
IP3_dBm = 42 dBm
3.0
IP3_dBm = 52 dBm
10.0 3.0 0.2 0.4 0.6 0.8 1.0 2.0 4.0 5.0
IP3_dBm = 48 dBm
- 0.2
0
. -0
4
-0. 6
.0 -2
Swp Min 1
-0 .8
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filcs.com
-1.0
-4 . 0
IP3_dBm = 46 dBm
NOTE: IP3 contours generated with PIN = 11dB back-off from P1dB. Local maxima for best linearity located at: L = 15 + j4.5 and L = 28 - j25 with S = 9.5 - j4
-5 .0
-3. 0
-1 0.0
0. 4
IP3_dBm = 50 dBm
4 .0
0 .2
5.0
IP3_dBm = 40 dBm
10 .0
Revised: 05/03/04 Email: sales@filcsi.com
IM Products (dBc)
PRELIMINARY
FPD2000AS
2W PACKAGED POWER PHEMT
FPD2000AS POWER CONTOURS 2 GHz
0 .6
Swp Max 181
2.
0.8
1.0
Pout_dBm = 22 dBm
0 3. 0
Pout_dBm = 32 dBm
Pout_dBm = 34 dBm
Pout_dBm = 30 dBm
-0 .2
. -0
4
-0 . 6
Pout_dBm = 26 dBm
.0 -2
-0 .8
Pout_dBm = 24 dBm
FPD2000AS I-V Curves
1.400 1.200 Drain-Source Current (A) 1.000 .800
VGS = -0.50V VGS = 0V
-1.0
VGS = -0.25V
.600 .400 .200 .000 0.00
VGS = -0.75V
VGS = -1.0V VGS = -1.25V
1.00
2.00
3.00
4.00
5.00
6.00
7.00
Drain-Source Voltage (V)
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filcs.com
-3 .0
Pout_dBm = 28 dBm
NOTE: Power contours measured at constant input power, level set to meet nominal P1dB rating at optimum match point. Optimum match: S = 3 - j6 and L = 11 - j3
-10 .0
10.0
0.2
0.6
0.8
1.0
2.0
4.0
0.4
3.0
5.0
0
Swp Min 1
Revised: 05/03/04 Email: sales@filcsi.com
-5 .0
-4 . 0
0. 4
4.0
5.0 0 .2
10 .0
8.00
PRELIMINARY
* RF PERFORMANCE OVER FREQUENCY:
FPD2000AS at VDS = 10V and IDS = 350mA
30.0
FPD2000AS
2W PACKAGED POWER PHEMT
25.0
20.0
Gain
15.0
S21 MSG
10.0
5.0
0.0 0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
FPD2000AS at VDS = 10V and IDS = 350mA
40
35
30
Power (dBm) or Gain (dB)
25
P1dB G1dB
20
15
10
5
0 500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filcs.com
Revised: 05/03/04 Email: sales@filcsi.com

▲Up To Search▲

Price & Availability of FPD2000AS

	To Download FPD2000AS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .